Silicon (Si) SDS
Siicon (Si) Data Sheet

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a substrate for production of optical filters. Large blocks of Silicon with polished faces are also employed as neutron targets in Physics experiments.

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Transmission Range
0.12 to 15 μm and 30 to >100 μm (1)
Refractive Index
3.4223 at 5 μm (1) (2)
Reflection Loss
46.2% at 5 μm (2 surfaces)
Absorption Coefficient
0.01 cm-1 @ 3 μm
Reststrahlen Peak
n/a
dn/dT
160 x 10-6/°C (3)
dn/dμ = 0
10.4 μm
Density
2.33 g/cc
Melting Point
1420°C
Thermal Conductivity
163 W m-1 K-1 @ 273 K
Thermal Expansion
2.6 x 10-6/°C @ 20°C
Hardness
Knoop 1150
Specific Heat Capacity
703 J Kg-1 K-1
Dielectric Constant
13 at 10 GHz
Youngs Modulus (E)
131 GPa (4)
Shear Modulus (G)
79.9 GPa (4)
Bulk Modulus (K)
102 GPa
Elastic Coefficients
C11=167; C12=65; C44=80 (4)
Apparent Elastic Limit
124.1 MPa (18,000psi)
Poisson Ratio
0.266 (4)
Solubility
Insoluble in water
Molecular Weight
28.09
Class/Structure
Cubic diamond, Fd3m
 

 

µm No
1.357 3.4975
1.367 3.4962
1.395 3.4929
1.5295 3.4795
1.66 3.4696
1.709 3.4664
1.813 3.4608
1.97 3.4537
2.153 3.4476
2.325 3.4430
µm No
2.714 3.4358
3.000 3.4320
3.303 3.430
3.500 3.4284
4.000 3.4257
4.258 3.4245
4.500 3.4236
5.000 3.4223
5.500 3.4213
6.000 3.4202
µm No
6.500 3.4195
7.000 3.4186
7.500 3.4186
8.000 3.4184
8.500 3.4182
10.00 3.4179
10.50 3.4178
11.04 3.4176
   
   

Silicon is grown by Czochralski pulling techniques (CZ) and contains some oxygen which causes an absorption band at 9 microns. To avoid this, Silicon can be prepared by a Float-Zone (FZ) process. Optical Silicon is generally lightly doped ( 15 to 40 ohm cm) for best transmission above 10 microns. Silicon has a further pass band 30 to 100 microns which is effective only in very high resistivity uncompensated material. Doping is usually Boron (p-type) and Phosphorus (n-type).
REFERENCES:
(1) Handbook Optical Constants, ed Palik, V1, ISBN 0-12-544420-6
(2) Li, Refractive Index of Germanium etc, J.Phys Chem, V9, p561, 1980
(3) Icenogle et al, Appl. Opt. V15, 2348 (1976)
(4) Wortman & Evans, V36, (1), P153 (1965)

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