Gallium Arsenide GaAs
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Transmission Range
0.9 to 16 μm
Refractive Index
3.2727 at 10.33 μm (1)
Reflection Loss
44% at 10.33 μm (2 surfaces)
Absorption Coefficient
0.01 cm-1
Reststrahlen Peak
n/a
dn/dT
147 x 10-6 K-1 @ 10μm (4)
dn/dμ = 0
0.63 μm
Density
5.315 g/cc
Melting Point
1511°C
Thermal Conductivity
48 W m-1 K-1 @ 273 K
Thermal Expansion
5.7 x 10-6/°C @ 300 K (3)
Hardness
Knoop 750
Specific Heat Capacity
360 J Kg-1 K-1
Dielectric Constant
12.91 at low frequencies
Youngs Modulus (E)
84.8 GPa
Shear Modulus (G)
n/a
Bulk Modulus (K)
75.5 GPa
Elastic Coefficients
n/a
Apparent Elastic Limit
71.9 MPa
Poisson Ratio
0.31
Solubility
Insoluble in water
Molecular Weight
144.64
Class/Structure
Cubic ZnS, F43m , cleaves on (100)
| µm | No |
|---|---|
| 1.033 | 3.492 |
| 1.550 | 3.3737 |
| 2.066 | 3.338 |
| 2.480 | 3.324 |
| 3.100 | 3.3125 |
| 4.133 | 3.3027 |
| µm | No |
|---|---|
| 4.959 | 3.2978 |
| 6.199 | 3.2921 |
| 7.293 | 3.2874 |
| 8.266 | 3.2831 |
| 9.537 | 3.2769 |
| 10.33 | 3.2727 |
| µm | No |
|---|---|
| 11.27 | 3.2671 |
| 12.40 | 3.2597 |
| 13.78 | 3.2493 |
| 15.50 | 3.2336 |
| 17.71 | 3.2081 |
| 19.07 | 3.1866 |
Gallium Arsenide is produced by Czochralski or horizontal Bridgeman crystal growth techniques. As it is arsenic bearing, precautions in handling and working should be observed.
REFERENCES:
(1) Handbook Optical Constants, ed Palik, V1, ISBN 0-12-544420-6
(2) Deutch, J.Electron. Mater. V4 p679
(3) Sze, Physics of Semiconductor Devices, Wiley 1981
(4) M.Cadona. Proc. Int Conf. Semi. Phys. 1960 p.388. Note: dn/dT = n x (4.5 +/-0.2)x10-5 °K-1